PART |
Description |
Maker |
SPMQ461-01 |
200 AMP/600 VOLTS HALF BRIDGE IGBT POWER MODULE FOR SPACE APPLICATIONS
|
SSDI[Solid States Devices, Inc]
|
DIM200WHS12-E000 |
Half Bridge IGBT Module 200 A, 1200 V, N-CHANNEL IGBT
|
Dynex Semiconductor, Ltd.
|
DIM200PHM33-A000 |
Half Bridge IGBT Module Preliminary Information 200 A, 3300 V, N-CHANNEL IGBT
|
Dynex Semiconductor, Ltd. Dynex Semiconductor Ltd. DYNEX[Dynex Semiconductor]
|
CM100DY12H |
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES | 100A I(C) 晶体管| IGBT功率模块|半桥| 600V的五(巴西)国际消费电子展| 100号A一(c
|
Mitsubishi Electric, Corp.
|
VII100-12S4 |
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CES | 100A I(C) 晶体管| IGBT功率模块|半桥| 1.2KV五(巴西)国际消费电子展| 100号A一(c
|
Aimtec
|
DIM200MHS17-A000 |
Half Bridge IGBT Module
|
http:// DYNEX[Dynex Semiconductor] Dynex Semiconductor Ltd.
|
BSM150GB120DN2E3166 150B12E2 C67076-A2112-A70 |
From old datasheet system IGBT Power Module (Half-bridge Including fast free-wheeling diodes Enlarged diode area)
|
SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|
GA400TD60U |
600V UltraFast 10-30 kHz Half-Bridge IGBT in a Dual INT-A-Pak package HALF-BRIDGE IGBT DUAL INT-A-PAK Ultra-FastTM Speed IGBT
|
IRF[International Rectifier]
|
BSM100GB120DN2 100B12N2 C67076-A2107-A70 |
From old datasheet system IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)
|
Siemens Semiconductor G... SIEMENS[Siemens Semiconductor Group] Infineon SIEMENS AG
|
BSM200GB120DN2 200B12N2 C67070-A2300-A70 |
From old datasheet system IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)
|
SIEMENS A G SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|
40MT120UH 40MT120UHT |
1200V UltraFast 10-30 kHz Half-Bridge IGBT in a MTP package HALF-BRIDGE IGBT MTP UltraFast NPT IGBT
|
IRF[International Rectifier]
|